Systems and methods for high-speed, low-profile memory packages and pinout designs

ABSTRACT

Systems and methods are provided for stacked semiconductor memory packages. Each package can include an integrated circuit (“IC”) package substrate capable of transmitting data to memory dies stacked within the package over two channels. Each channel can be located on one side of the IC package substrate, and signals from each channel can be routed to the memory dies from their respective sides.

BACKGROUND

Various types of nonvolatile memory (“NVM”), such as flash memory (e.g.,NAND flash memory and NOR flash memory), can be used for mass storage.For example, consumer electronic devices (e.g., portable media players)use flash memory to store data, including music, videos, images, andother media or types of information. An ongoing trend in the consumerelectronic industry involves utilizing more NVMs in smaller devices,creating the necessity for creative packaging solutions that increasedata storage density.

SUMMARY

Systems and methods for stacked semiconductor memory devices areprovided. A stacked semiconductor memory package can include a packagesubstrate and a number of NVM dies arranged in an arrow-shaped stack.The NVM die stack may be mounted on and communicatively coupled to thepackage substrate with a surface mount socket such as, for example, aLand Grid Array (“LGA”). The NVM dies can be stacked within the packagein an arrow-shaped configuration in which half of the NVM dies form astaircase in a first direction, and half of the NVM dies are rotated180° and continue the stack in a second, opposing direction. A memorycontroller can communicate with the NVM dies via electrical connectionsprovided by a printed circuit board (“PCB”) or printed wiring board(“PWB”), the package substrate, and wire bonds.

According to some embodiments, a novel surface mount pinout design maybe used in conjunction with the above-described stacked semiconductormemory device. The pinout design may be configured to enhance signalintegrity by, for example, minimizing the distance between differentialpairs of connections carrying high-speed signals, minimizing the wirebond length, avoiding the crossing of high-speed signals inside thepackage, providing a ground (“GND”) pin in the center of the high-speedpins, and separating high-speed and low-speed pins. According to furtherembodiments, the placement of the high-speed pins may be optimized forimproving signal integrity within each individual NVM package orthroughout an entire NVM system. The surface mount pinout design mayaccommodate two communications channels configured such that thecorresponding pins of each channel are symmetrically placed when rotated180°.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects of the invention, its nature, and variousfeatures will become more apparent upon consideration of the followingdetailed description, taken in conjunction with the accompanyingdrawings, in which like reference characters refer to like partsthroughout, and in which:

FIG. 1 is a diagram depicting an illustrative system that includes ahost and an NVM package with a memory controller in accordance withvarious embodiments;

FIG. 2 is a cross-sectional view of the NVM package of FIG. 1 inaccordance with various embodiments;

FIG. 3 is an cross-sectional view of a raw NVM package in accordancewith various embodiments;

FIG. 4 is a bottom plan view of a surface mount package substrateillustrating a pinout design in accordance with various embodiments;

FIG. 5 is another bottom plan view of a surface mount package substrateillustrating another pinout design in accordance with variousembodiments; and

FIG. 6 is a flowchart of a process for manufacturing a stackedsemiconductor memory device in accordance with various embodiments.

DETAILED DESCRIPTION

Surface mount packages for integrated circuits (“ICs”) have becomeprevalent in recent years as the number of interconnects required foreach IC has increased beyond the capabilities of traditionalthrough-hole IC packages (e.g., dual-inline packages (“DIP”) andpin-grid arrays (“PGA”)). Examples of surface mount IC packages includeball-grid arrays (“BGA”) and land-grid arrays (“LGA”). A BGA or LGA caninclude an array of contacts arranged in an x-y plane on a bottomsurface of the package substrate. The contacts can be soldered tocorresponding contacts of a second substrate such as, for example, a PCBor a PWB. The second substrate can include conductive traces forcarrying signals to and from the IC package.

Exemplary embodiments disclosed herein may refer to IC packagesubstrates, which are referred to as LGAs for the sake of clarity.However, one skilled in the art may appreciate that any suitable type ofsurface mount package or through hole package may be substituted for theLGA without departing from the spirit of the invention.

In particular, the contacts on the bottom surface of the LGA can berouted to the top surface using conductive vias formed through thepackage substrate. The LGA can also include conductive pads and/ortraces on the top surface of the package substrate for communicativelycoupling to one or more ICs mounted on top of the LGA. In someembodiments, wire-bond pads can be formed on the top surface of the LGAfor communicatively coupling the contacts to the IC(s). Additionally,the first IC in a stack can be flip-chip bonded to the top surface ofthe package substrate. In some embodiments, the IC package can be an NVMpackage, and the flip-chip bonded IC can be a memory controller for theNVM package.

In some embodiments, the NVM package can include a stack of NVM diesmounted to the top surface of an LGA. The stack can be arrow-shaped,with the first half of the NVM dies forming a staircase in a firstdirection and the second half of the NVM dies continuing the stack andforming a staircase in the opposite direction. This arrow-shaped stackeddie layout can provide an exposed portion on the top surface of each NVMdie for receiving wire-bond wires. The first half of the NVM dies can bewire bonded to the package substrate from the side of the LGA adjacentto the steps of the staircase, while the second half of the NVM dies canbe wire bonded to the LGA from the opposite side (i.e., adjacent to thesteps of the second staircase). The NVM dies in the second staircase maybe rotated 180° from those in the first half such that the bonding padsare facing in the correct direction to receive the wire-bond wires.

The contacts formed on the bottom side of the LGA can be arranged suchthat a first set of contacts (e.g., a first channel) can be arranged onthe side of the package substrate closest to the steps of the firststaircase to minimize wiring distance between those contacts and thewire-bond pads on the top surface. The first set of contacts can bededicated to the first half of the NVM dies. Similarly, a second set ofcontacts (e.g., a second channel) can be arranged on the side of thepackage substrate closest to the steps of the second staircase. Thesecond set of contacts can be dedicated to the second half of the NVMdies. Further optimizations of various contact arrangements will bediscussed in more detail below with respect to FIGS. 4 and 5.

FIG. 1 is a diagram depicting system 100, including host 102 and NVMpackage 104. Host 102 may communicate with NVM package 104, which caninclude memory controller 106, host interface 110, and memory dies 112a-n with corresponding NVMs 128 a-n. Host 102 can be any of a variety ofhost devices and/or systems, such as a portable media player, a cellulartelephone, a pocket-sized personal computer, a personal digitalassistant (“PDA”), a desktop computer, a laptop computer, and/or atablet computing device. NVM package 104 can include NVMs 128 a-n (e.g.,in the memory dies 112 a-n) and can be a ball grid array package orother suitable type of integrated circuit (“IC”) package. NVM package104 can be part of and/or separate from host 102. For example, host 102can be a board-level device and NVM package 104 can be a memorysubsystem that is installed on the board-level device. In otherembodiments, NVM package 104 can be coupled to host 102 with a wired(e.g., SATA) or wireless (e.g., Bluetooth™ ) interface.

Host 102 can include host controller 114 that is configured to interactwith NVM package 104. For example, host 102 can transmit various accessrequests, such as read, program, and erase operations, to NVM package104. Host controller 114 can include one or more processors and/ormicroprocessors that are configured to perform operations based on theexecution of software and/or firmware instructions. Additionally and/oralternatively, host controller 114 can include hardware-basedcomponents, such as application-specific integrated circuits (“ASICs”),that are configured to perform various operations. Host controller 114can format information (e.g., commands, data) transmitted to NVM package104 according to a communications protocol shared between host 102 andNVM package 104.

Host 102 can include storage component 134, which may include volatilememory 108. Volatile memory 108 can be any of a variety of volatilememory types, such as cache memory or RAM. Host 102 can use volatilememory 108 to perform memory operations and/or to temporarily store datathat is being read from and/or written to NVM package 104. For example,volatile memory 108 can temporarily store a queue of memory operationsto be sent to, or to store data received from, NVM package 104.

Host 102 can communicate with NVM package 104 over communicationschannel 116. Communications channel 116 can be fixed (e.g., fixedcommunications channel), detachable (e.g., universal serial bus (USB),serial advanced technology (SATA)), or wireless (e.g., Bluetooth™).Interactions with NVM package 104 can include providing access requestsand transmitting data, such as data to be programmed to one or more ofmemory dies 112 a-n, to NVM package 104. Communication overcommunications channel 116 can be received at host interface 110 of NVMpackage 104. Host interface 110 can be part of and/or communicativelyconnected to memory controller 106. In some embodiments, for examplewhen memory controller 106 is located outside of NVM package 104, hostinterface 110 may also be omitted from NVM package 104.

Like host controller 114, memory controller 106 can include one or moreprocessors and/or microprocessors 120 that are configured to performoperations based on the execution of software and/or firmwareinstructions. Additionally and/or alternatively, memory controller 106can include hardware-based components, such as ASICs, that areconfigured to perform various operations. Memory controller 106 canperform a variety of operations, such as performing access requestsinitiated by host 102.

Host controller 114 and memory controller 106, alone or in combination,can perform various memory management functions, such as garbagecollection and wear leveling. In implementations where memory controller106 is configured to perform at least some memory management functions,NVM package 104 can be termed “managed NVM” (or “managed NAND” for NANDflash memory). This can be in contrast to “raw NVM” (or “raw NAND” forNAND flash memory), in which host controller 114, external to NVMpackage 104, performs memory management functions for NVM package 104.

In some embodiments, memory controller 106 can be incorporated into thesame package as memory dies 112 a-n. In other embodiments, memorycontroller 106 may be physically located in a separate package or in thesame package as host 102. In some embodiments, memory controller 106 maybe omitted, and all memory management functions that are normallyperformed by memory controller 106 (e.g., garbage collection and wearleveling) can be performed by a host controller (e.g., host controller114).

Memory controller 106 may include volatile memory 122 and NVM 124.Volatile memory 122 can be any of a variety of volatile memory types,such as cache memory or RAM. For example, memory controller 106 can usevolatile memory 122 to perform access requests and/or to temporarilystore data that is being read from and/or written to NVMs 128 a-n inmemory dies 112 a-n. In addition, volatile memory 122 can store firmwareand memory controller 106 can use the firmware to perform operations onNVM package 104 (e.g., read/program operations).

Memory controller 106 can use shared internal bus 126 to access NVMs 128a-n, which may be used for persistent data storage. Although only oneshared internal bus 126 is depicted in NVM package 104, an NVM packagecan include more than one shared internal bus. Each internal bus can beconnected to multiple (e.g., 2, 3, 4, 8, 32, etc.) memory dies asdepicted with regard to memory dies 112 a-n. Memory dies 112 a-n can bephysically arranged in a variety of configurations, including a stackedconfiguration, and may be, according to some embodiments, IC dies.According to some embodiments, memory dies 112 a-n arranged in stackedconfigurations can be electrically coupled to memory controller 106 withconductive epoxy traces. These embodiments will be discussed in moredetail with respect to FIGS. 3-5 below.

NVMs 128 a-n can be any of a variety of NVM, such as NAND flash memorybased on floating gate or charge trapping technology, NOR flash memory,erasable programmable read only memory (“EPROM”), electrically erasableprogrammable read only memory (“EEPROM”), ferroelectric RAM (“FRAM”),magnetoresistive RAM (“MRAM”), phase change memory (“PCM”), or anycombination thereof.

FIG. 2 is a cross-sectional view of NVM package 204 in accordance withvarious embodiments. NVM package 204 can include memory dies 212 a-h andLGA 230, which may be, as disclosed above, any suitable packagesubstrate such as an LGA, BGA, or PGA, for example. NVM package 204, andmemory dies 212 a-h can correspond to NVM package 104 and memory dies112 a-n of FIG. 1, respectively. NVM package 204 may also includeencapsulate 232 and wire-bond wires 240. In particular, NVM package 204can be a “raw” NVM package that does not include a dedicated, in-packagememory controller such as memory controller 106, for example.

The above-referenced elements may be mounted on substrate 234, which canbe a substrate such as, for example, a PCB or PWB for an entire NVMsystem (e.g., system 100 of FIG. 1) or a portion of an NVM system.Substrate 234 may include conductive leads that facilitate connectivitybetween multiple components of a system. For instance, LGA 230 of NVMpackage 204 can be communicatively coupled to contacts (not shown) ofsubstrate 234 (e.g., using solder), and printed conductors (not shown)can electrically couple memory dies 212 a-h to a host controller (e.g.,host controller 114 of FIG. 1) and/or other system components.

To prevent damage to NVM package 204 during operation or in extremeconditions, LGA 230, encapsulate 232, and memory dies 212 a-h may bemade of materials with similar coefficients of thermal expansion. Forexample, memory dies 212 a-h can be integrated circuit dies processed ona Si wafer, LGA 230 may be a laminate formed from layers of cloth orfiber materials and a resin, and encapsulate 232 may be a plastic, aceramic, or a silicone rubber compound. In other embodiments, memorycontroller 206 can be processed on any suitable substrate (e.g., Ge,GaAs, InP) and encapsulate 232 can be any suitable encapsulate materialthat provides physical and environmental protection for memorycontroller 206. Encapsulate 232 may also be chosen to efficientlydissipate heat from memory dies 212 a-h.

NVM package 204 may be fully or partially encapsulated in anelectromagnetic interference (“EMI”) shield 236. EMI shield 236 mayprevent the emission of electromagnetic radiation from components of NVMpackage 204. Similarly, EMI shield 236 may prevent damage to componentsof NVM package 204 from electromagnetic and/or radiofrequencyinterference emitted by external sources. In general, EMI shield 236 canfunction as a Faraday cage, which can block the propagation of electricand/or electromagnetic fields. Furthermore, EMI shield 236 may becoupled to ground in order to dissipate electric charge. As shown inFIG. 2, EMI shield 236 may be a “can” type EMI shield that encloses aportion or all of NVM package 204. According to some embodiments, spacewithin EMI shield 236 may be empty (e.g., filled with air). In otherembodiments, space within EMI shield 336 may be filled with a suitabledielectric material. EMI shield 236 may also, according to someembodiments, be deposited over encapsulate 232 material as a conformalconducting thin film using standard coating techniques (e.g., physicalvapor deposition (“PVD”), chemical vapor deposition (“CVD”), spincoating, etc.).

Although embodiments described herein refer to specific semiconductordies (e.g., memory controllers and memory dies), one skilled in the artwill appreciate that a semiconductor package (e.g., NVM package 204) mayincorporate any suitable combination of semiconductor dies. For example,a package might include a microprocessor die connected to a stack ofother semiconductor dies, including volatile memory, nonvolatile memory,and/or one or more analog circuit dies.

NVM package 204 may be an example of a stacked semiconductor dieconfiguration because one or more individual semiconductor chips (e.g.,memory dies 212 a-h) are arranged in a stacked configuration. In someembodiments, memory dies 212 a-h affixed to the surface of LGA 230, andto each other, using any suitable adhesive (e.g., an epoxy). Stackedsemiconductor die configurations can provide a number of advantages overcircuit board configurations in which individual semiconductor chips aremounted laterally on a circuit board. For example, dies in stackedconfigurations have a smaller “footprint,” which can be beneficial inapplications where a small overall device size is desired. In fact,because the footprint of the package can be very close to the dimensionsof the largest semiconductor chip, NVM package 204 may be referred to asa “chip-scale package.” Stacking memory dies also increases the datastorage density of an electronic device, allowing more data to be storedin the same physical space.

Although eight memory dies are shown in FIG. 2, one skilled in the artwill appreciate that any suitable number of memory dies can beincorporated into NVM package 204, subject to space, wiring, and/orstructural limitations.

Individual memory dies, according to some embodiments, can becommunicatively coupled to LGA 230 using wire-bond wires 240. The wirebonding process can involve attaching flexible wires from bond pads 260on a first surface 238 of LGA 230 to bond pads 262 formed on memory dies212 a-h. The wires may be made of any suitable highly-conductive,ductile metal (e.g., Al, Au, Cu). Depending on the number of requiredexternal connections, the bond pads on LGA 230 and/or memory dies 212a-h may be staggered. Staggering the bond pads can decrease the bond-padpitch (the center to center distance between bond pads) and allow moreexternal connections than inline bond pads. Staggered bond pads mayrequire the bond pads on LGA 230 to be terraced to prevent shortingbetween adjacent wires.

Through this wire-bonding process, memory dies 212 a-h can becommunicatively coupled to LGA 230 and various other system components(e.g., host 102 of FIG. 1). Wire-bond wires 240 and electricalconnections of LGA 230 and substrate 234, combined, can represent, forexample, shared internal bus 126 of FIG. 1.

To form the arrow-shaped structure depicted in FIG. 2, individual memorydies 212 a-h can be stacked and glued together with adjacent memory diesbeing offset slightly from one another, resulting in an exposed surfaceon each memory die. The exposed surfaces of memory dies 212 a-h caninclude bond pads 262 for coupling to wire-bond wires 240. As depictedin FIG. 2, half of the memory dies (i.e., memory dies 212 a-d) can forma staircase in a first direction leaving exposed surfaces closer to afirst edge of NVM package 204, and half of the memory dies (i.e., memorydies 212 e-h) can form a staircase in a second direction leaving exposedsurfaces closer to a second edge of NVM package 204 that opposes thefirst side. Wire-bond wires 240 can be coupled to memory dies 212 a-dand 212 e-h from the first side and second side of NVM package 204,respectively.

FIG. 3 is a cross-sectional view of NVM package 304 in accordance withvarious embodiments. NVM package 304 can include memory controller 306,memory dies 312 a-f, and LGA 330. NVM package 304, memory controller306, memory dies 312 a-h can correspond to, for example, NVM package104, memory controller 106, and memory dies 112 a-n of FIG. 1,respectively. NVM package 304 may also include encapsulate 332 andwire-bond wires 340. The above elements may be mounted on substrate 334,which can be a substrate for an entire NVM system (e.g., system 100 ofFIG. 1) or a portion of an NVM system. Because NVM package 304 caninclude memory controller 306, NVM package 304 can be a “managed” NVM.

As shown in FIG. 3, memory controller 306 can be bonded with anysuitable adhesive (e.g., an epoxy) to LGA 330, which may be, asdisclosed above, any suitable package substrate such as an LGA, BGA, orPGA, for example. Further, memory controller 306 can include an activesurface 350 and an inactive surface 352. In these embodiments, activesurface 350 of memory controller 306 can be flip-chip bonded to a firstsurface 338 of LGA 330. Accordingly, memory controller 306 can includesolder bumps 316 formed on active surface 350, which can be used forflip-chip bonding memory controller 306 to first surface 338 of LGA 330.Memory dies 312 a-h can be mounted on inactive surface 352 of memorycontroller 306 using any suitable adhesive (e.g., an epoxy).

In general, flip-chip bonds can reduce the chip-to-package interconnectlength in comparison with other bonding methods (e.g., wire bonding andTAB bonding), resulting in reduced inductance and, therefore, improvedhigh-speed signal integrity. Solder bumps 316 may be added to memorycontroller dies during wafer processing. When memory controller 306 andLGA 330 are properly aligned, solder bumps 316 can be reflowed to createan electrical connection between memory controller 306 and first surface338 of LGA 330. An underfill adhesive may be added between memorycontroller 306 and LGA 330 to reduce stress on solder bumps 316.

In other embodiments not shown in the figures, memory controller 306 maybe coupled to LGA 330 with active surface 350 facing away from firstsurface 338 of LGA 330. In these embodiments, memory controller 306 maybe communicatively coupled to LGA 330 via wire-bond wires 340 along withmemory dies 312 a-h. Accordingly, memory controller 306 may includewire-bond pads on an exposed surface for coupling to wire-bond wires340.

FIG. 4 is an illustrative plan view of the underside of LGA 430, inaccordance with some embodiments. LGA 430 can correspond to LGA 230 ofFIG. 2, for example.

An array of contacts 450 can be arranged on the underside of LGA 430 forconducting signals between an NVM package (e.g., NVM package 204) andvarious other system components (e.g., host 102 of FIG. 1). Contacts 450can include the following contacts suitable for communicating with oneor more dies in an NVM package:

-   -   Vcc: Supply Voltage (Read) (×4)    -   VccQ: Supply Voltage (I/O) (×4)    -   Vpp: Supply Voltage (Program/Erase)    -   Vref: Reference voltage    -   GND: Ground (×6)    -   PPM0-PPM1 IN: Power Control INPUT Channels 0,1    -   PPM0-PPM1 OUT: Power Control OUTPUT Channels 0,1    -   WE0#-WE1#: Write Enable Channels 0,1    -   CLE0-CLE1: Command Latch Enable Channels 0,1    -   ALE0-ALE1: Address Latch Enable Channels 0,1    -   RE0-RE1: Read Enable Channels 0,1    -   RE0#-RE1#: Read Enable Channels 0,1    -   CE0#-CE7#: Chip Enable 0-7    -   R/B0-R/B1: Ready/Busy Channels 0,1    -   DQS0-DQS1: Data Queue Strobe Channels 0,1    -   DQS0#-DQS1#: Data Queue Strobe Channels 0,1    -   IO(0-7)-0: Data I/O Pins 0-7 Channel 0    -   IO(0-7)-1: Data I/O Pins 0-7 Channel 1

The array of contacts 450 can be arranged in the x-y with row (y-axis)coordinates extending from 0-8 and column coordinates extending fromOA-OF for power and ground pins, which can be arranged at the edges ofthe array, and A-N for signal pins, which can be arranged generallycentrally in the array with respect to the y-axis. One skilled in theart will appreciate that the pin coordinate system is arbitrary and thatany suitable coordinate system may be employed.

The Data I/O Pins (e.g., IO(0-7)-0 and IO(0-7)-1), can be used forcommunicating high-speed data signals to one or more NVM dies in an NVMpackage (e.g., memory dies 112 a-n of FIG. 1). In particular, each setof Data I/O Pins can represent an 8-bit communications channel between acontroller and an NVM die (e.g., one of memory dies 212 a-h of FIG. 2).For instance, for the raw NAND NVM package disclosed above with respectto FIG. 2, the controller may be a controller of a host device (e.g.,host controller 114 of FIG. 1). On the other hand, for the managed NANDNVM package disclosed above with respect to FIG. 3, the controller maybe a memory controller of the NVM package (e.g., memory controller 306of FIG. 3).

In high-speed applications, minimizing the distance between differentialpairs and reducing the overall distance a signal must travel can help toimprove signal integrity over Data I/O Pins. In particular, the distancebetween differential-pair contacts may be required to be less than apredetermined threshold distance. Thus, an optimal pinout design mayreduce the distance between pins carrying differential pair signals aswell as the overall distance those signals travel. These goals may bemet generally with the pin arrangement displayed in FIG. 4.

The Data I/O Pins of each channel can be arranged in a loop-shapesurrounding a GND pin. Differential pair signals can be carried overadjacent Data I/O Pins in the loop-shaped layouts. For example, thefollowing pins may carry differential pair signals for

Channel 0: IO0-0 and IO3-0; IO1-0 and IO2-0; IO4-0 and IO7-0; and IO5-0and IO6-0. The same can apply, mutatis mutandis, to the Data I/O Pinsfor Channel 1. The incorporation of a GND pin within the loop-shapedData I/O Pin layout can further help to improve signal integrity byreducing the ground offset between the pins of each differential pair.The loop-shaped layout can also reduce the need to cross high-speedsignal carriers within the NVM package, reducing cross-talk between thecarriers and thereby improving signal integrity.

Additional pins may be part of the loop-shaped Data I/O Pin layoutincluding, for example, the RE0, RE1, RE0#, RE1#, DQS0#, and DQS1# pins.

The loop-shaped layouts of the Data I/O pins can be offset from oneanother on y-axis and arranged between rows of pins dedicated tonon-Data I/O activity. For example, GND, VccQ, Vcc, PPM0 IN, and PPM1 INpins can be arranged in rows along the top and bottom edges of thearray, and the loop-shaped Data I/O pin layout can be arranged betweenthose rows. Additional pins, including write enable, chip enable,address latch enable, PPM OUT, and command latch enable pins, can bearranged in diagonal rows in between the loop-shaped layouts.

According to some embodiments, the pins dedicated to each channel may besymmetrically placed about a central point of rotational symmetry 470.Pins dedicated to each channel can be arranged on either side of acentral axis 472 drawn through the point of rotational symmetry. Thus,as shown in FIG. 4, Data I/O pins IO(0-7)-0 can correspond to Data I/Opins IO(0-7)-1 reflected about the point of rotational symmetry.Similarly, each pin of Channel 0 maps to a corresponding pin of Channel1 when reflected about the axis of symmetry.

LGA 430 may be particularly useful for routing signals to NVM die of astacked NVM package such as NVM package 204 of FIG. 2, for example.Because half of the memory dies (i.e., memory dies 212 a-d) can form astaircase in a first direction leaving exposed surfaces on closer to afirst edge of NVM package 204, signals routed from a subset of contacts450 dedicated to a single channel (e.g., Channel 0) and arranged on aportion of LGA 430 (e.g., closer to the first edge of NVM package 204)can be routed to bond pads of memory dies 212 a-d with minimal signalcarrier length. For instance, the first subset 452 of contacts 450,dedicated to Channel 0, can be arranged on a portion of LGA 430 closestto the exposed surfaces of memory dies 212 a-d. A second subset 454 ofcontacts 450, dedicated to Channel 1, can be arranged on the oppositeside of the array (e.g., on the opposite side of central axis 472) and,therefore, closest to the exposed surfaces of memory dies 212 e-h.Because memory dies 212 e-h can be rotated 180° from memory dies 212 a-dand Channel 0 can be rotated 180° from Channel 1, each channel can berouted to a respective set of memory dies using identical wiring layouts(though rotated 180° from one another).

FIG. 5 is an illustrative plan view of the underside of LGA 530, inaccordance with some embodiments. LGA 530 can correspond to LGA 230 ofFIG. 2, for example.

An array of contacts 550 can be arranged on the underside of LGA 530 forconducting signals between an NVM package (e.g., NVM package 204) andvarious other system components (e.g., host 102 of FIG. 1). Contacts 550can include the following contacts suitable for communicating with oneor more dies in an NVM package:

-   -   Vcc: Supply Voltage (Read) (×4)    -   VccQ: Supply Voltage (I/O) (×4)    -   Vpp: Supply Voltage (Program/Erase)    -   Vref: Reference voltage    -   GND: Ground (×6)    -   PPM0-PPM1 IN: Power Control INPUT Channels 0,1    -   PPM0-PPM1 OUT: Power Control OUTPUT Channels 0,1    -   WE0#-WE1#: Write Enable Channels 0,1    -   CLE0-CLE1: Command Latch Enable Channels 0,1    -   ALE0-ALE1: Address Latch Enable Channels 0,1    -   RE0-RE1: Read Enable Channels 0,1    -   RE0#-RE1#: Read Enable Channels 0,1    -   CE0#-CE7#: Chip Enable 0-7    -   R/B0-R/B1: Ready/Busy Channels 0,1    -   DQS0-DQS1: Data Queue Strobe Channels 0,1    -   DQS0#-DQS1#: Data Queue Strobe Channels 0,1    -   10(0-7)-0: Data I/O Pins 0-7 Channel 0    -   10(0-7)-1: Data I/O Pins 0-7 Channel 1

The array of contacts 550 can be arranged in the x-y with row (y-axis)coordinates extending from 0-8 and column (x-axis) coordinates extendingfrom OA-OF for power and ground pins and A-N for signal pins. As shownin FIG. 5, power and ground pins are arranged at the edges of the arraywhich are arranged at the edges of the array, and signal pins arearranged generally in the center of the array. One skilled in the artwill appreciate that the pin coordinate system is arbitrary and that anysuitable coordinate system may be employed.

The Data I/O Pins, IO(0-7)-0 and IO(0-7)-1), can be used forcommunicating high-speed data signals to one or more NVM dies in an NVMpackage (e.g., memory dies 112 a-n of FIG. 1). In particular, each setof Data I/O Pins can represent an 8-bit communications channel between acontroller and an NVM die (e.g., one of memory dies 212 a-h of FIG. 2).For instance, for the raw NAND NVM package disclosed above with respectto FIG. 2, the controller may be a controller of a host device (e.g.,host controller 114 of FIG. 1). On the other hand, for the managed NANDNVM package disclosed above with respect to FIG. 3, the controller maybe a memory controller of the NVM package (e.g., memory controller 306of FIG. 3).

The pin arrangement displayed in FIG. 5 may represent an alternativeembodiment for improving signal integrity over Data I/O pins.

The Data I/O Pins of each channel can be arranged in a C-shapesurrounding a GND pin. Differential pair signals can be carried overadjacent Data I/O Pins in the C-shape layouts. For example, thefollowing pins may carry differential pair signals for Channel 0: IO0-0and IO1-0; IO2-0 and IO3-0; IO4-0 and IO5-0; and IO6-0 and IO7-0. Thesame applies, mutatis mutandis, to the Data I/O Pins for Channel 1. Theincorporation of a GND pin within the C-shaped Data I/O Pin layout canfurther help to improve signal integrity by reducing the ground offsetbetween the pins of each differential pair. The C-shaped layout can alsoreduce the need to cross high-speed signal carriers within the NVMpackage, reducing cross-talk between the carriers and thereby improvingsignal integrity.

Additional pins may be part of the C-shaped Data I/O Pin layoutincluding, for example, the RE0, RE1, RE0#, RE1#, DQS0#, and DQS1# pins.

The C-shaped layout of Data I/O pins can be centered on the y-axisbetween rows of pins dedicated to non-Data I/O activity. For example,GND, VccQ, Vcc, PPM0 IN, and PPM1 IN pins can be arranged in rows alongthe top and bottom edges of the array, and the C-shaped Data I/O pinlayout can be centered between those rows. Additional pins, includingwrite enable, chip enable, address latch enable, PPM OUT, and commandlatch enable pins, can be arranged in rows set between the edge rows andthe C-shaped layout.

According to some embodiments, the pins dedicated to each channel may besymmetrically placed about a central, y-axis-oriented axis of symmetry.Pins dedicated to each channel can be arranged on either side of theaxis of symmetry 570 such that a second LGA can be rotated upside downalong the axis of symmetry. As a result, the second LGA's pins cancoordinate with the pins of LGA 530. Thus, as shown in FIG. 5, Data I/Opins IO (0-7)-0 can correspond to Data I/O pins IO (0-7)-1 reflectedabout the axis of symmetry. Similarly, each pin of Channel 0 maps to acorresponding pin of Channel 1 when reflected about the axis ofsymmetry.

LGA 530 may be used with a stacked NVM package such as NVM package 204of FIG. 2, for example. As described above, a first subset 552 ofcontacts 550 dedicated to Channel 0 and arranged on one side of axis ofsymmetry 570 can be routed with minimum signal carrier distance tocommunicatively couple first subset 552 with bond pads on the exposedsurfaces of memory dies 212 a-d, for example. Similarly, a second subsetof contacts 554 dedicated to Channel 1 and arranged on the other side ofthe axis of symmetry 570 can be routed with minimum signal carrierdistance to communicatively couple subset 554 with bond pads on theexposed surfaces of memory dies 212 e-h. Because contacts 550 may not berotationally symmetric about a point, the wiring within NVM package 204may need to be altered for each channel to account for memory dies 212a-d being rotated 180° from memory dies 212 e-h.

FIG. 6 is a flowchart of process 600 for manufacturing a stackedsemiconductor memory device in accordance with some embodiments. At step601, an IC package substrate (e.g., LGA 230 of FIG. 2) can be provided.The bottom surface of the LGA can include an array of contacts forcommunicatively coupling the LGA with a system substrate (e.g.,substrate 234 of FIG. 2). The array of contacts may be arranged, forexample, as described above with respect to FIGS. 4 and 5. Accordingly,a first communications channel can be provided on a first portion thebottom surface of the LGA, and a second communications channel can beprovided on a second portion of the bottom surface of the LGA. Further,the LGA can include any suitable vias and/or traces for routing thecontacts on the bottom surface of the LGA to conductive features (e.g.,bond pads) on the top surface of the LGA.

Next, at step 603 a memory controller (e.g., memory controller 306 ofFIG. 3) can optionally be physically coupled to the LGA. In someembodiments, the memory controller can be coupled to the packagesubstrate in a flip-chip configuration. In these embodiments, the activesurface of the memory controller can include a number of solder bumpsthat allow direct connection between the memory controller and the LGA.In other embodiments, the memory controller can be wire bonded to bondpads provided on a first surface of the LGA. In still furtherembodiments, the memory controller may be omitted entirely such that thestacked semiconductor memory device is a raw NVM device.

At step 605, a stack of NVM dies (e.g., memory dies 212 a-h) can becoupled to the top surface of the LGA or the memory controller in anarrow-shaped configuration with a suitable adhesive. In someembodiments, an epoxy can be introduced between each memory die. Thestack can then be arranged into the arrow-shaped stack. Finally, theepoxy can be cured to solidify the stack of memory dies. The stack ofmemory dies 212 a-h can then be affixed to LGA 230 using any suitablemethod. According to some embodiments, the stack of memory dies 212 a-ccan be epoxied to LGA 230 at the same time the stack itself is beingformed.

Any number of NVM dies can be included in the stack, subject to space,wiring, and/or structural limitations. Each NVM die can be coupledphysically to an adjacent die with a suitable adhesive, and the dies maybe arranged such that a first half of the NVM dies form a staircase in afirst direction and a second half of the

NVM dies are rotated 180° and form a staircase in a second direction.The resulting arrow-shaped stack can provide an exposed surface on eachNVM die on which bond pads can be provided. Any suitable techniques fordepositing and removing conductive materials from a surface may be usedto provide the bond pads.

At step 607, the bond pads provided on the edges of the NVM dies in thefirst half of the arrow-shaped stack can be electrically coupled to afirst subset (e.g., first subset 552 of FIG. 5) of contacts of the LGAassociated with the first communications channel. In some embodiments,wire-bond wires may be used for this purpose as described above withrespect to FIG. 2. Similarly, at step 609, the bond pads provided on theedges of the NVM dies in the second half of the arrow-shaped stack canbe electrically coupled to a second subset (e.g., subset 554 of FIG. 5)contacts of the LGA associated with the second communications channel.

Next, at step 611, an EMI shield (e.g., EMI shield 336 of FIG. 3) canoptionally be coupled to the stacked semiconductor memory package. TheEMI shield may be a hollow can-type EMI shield that can cover all orpart of the stacked semiconductor memory package. In some embodiments,the space between the EMI shield and the components of the memory devicecan be filled with a dielectric material. In those embodiments, aconductive thin film can be deposited on the dielectric material to formthe EMI shield. To dissipate charge, the EMI shield can be wired toground (e.g., a ground pin on a nearby circuit board).

It is to be understood that the steps shown in process 600 of FIG. 6 aremerely illustrative and that existing steps may be modified or omitted,additional steps may be added, and the order of certain steps may bealtered.

While there have been described systems and methods for stackedsemiconductor memory devices, it is to be understood that many changesmay be made therein without departing from the spirit and scope of theinvention. Insubstantial changes from the claimed subject matter asviewed by a person with ordinary skill in the art, no known or laterdevised, are expressly contemplated as being equivalently within thescope of the claims. Therefore, obvious substitutions now or later knownto one with ordinary skill in the art are defined to be within the scopeof the defined elements.

The described embodiments of the invention are presented for the purposeof illustration and not of limitation.

1-9. (canceled)
 10. A method for manufacturing a stacked semiconductorpackage, the method comprising: providing an integrated circuit (“IC”)package substrate; physically coupling an stack of memory dies to a topsurface of the IC package substrate in an arrow-shaped stack;electrically coupling bond pads provided on exposed surfaces of thememory dies in a first half of the arrow-shaped stack to contacts of theIC package substrate associated with a first communications channel; andelectrically coupling bond pads provided on exposed surfaces of thememory dies in a second half of the arrow-shaped stack to contacts ofthe IC package substrate associated with a second communicationschannel.
 11. The method of claim 10, further comprising: forming aplurality of electrically conductive vias through the IC packagesubstrate that extend from the top surface of the IC package substrateto a bottom surface of the IC package substrate.
 12. The method of claim11, further comprising an array of electrical contacts formed on thebottom surface of the IC package substrate, the array of electricalcontacts being communicatively coupled to the bond pads using theplurality of electrically conductive vias.
 13. The method of claim 12,wherein a first subset of the array of electrical contacts formed on afirst side of the bottom surface of the IC package substrate correspondsto the first communications channel, and wherein a second subset of thearray of electrical contacts formed on a second side of the bottomsurface of the IC package substrate corresponds to the secondcommunications channel.
 14. The method of claim 10, further comprisingcoupling an IC die between the top surface of the IC package substrateand the stack of memory dies.
 15. The method of claim 14, wherein thecoupling the IC die comprises flip chip bonding the IC die to the topsurface of the IC package substrate.
 16. The method of claim 14, whereinthe coupling the IC die comprises wire bonding the IC die to bond padsformed on the top surface of the IC package substrate.
 17. The method ofclaim 10, further comprising coupling an electromagnetic interference(“EMI”) shield to the stacked semiconductor package.
 18. The method ofclaim 17, further comprising filling space between the EMI shield andthe IC package substrate with a dielectric material. 19.-32. (canceled)